| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356731 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠CIGS thin films with Ga-grading profile were prepared by evaporation of GaxSe for incorporation of gallium. ⺠The process was found to have little effect on the film structure. ⺠No new impurity phases were detected. ⺠The proposed process was feasible for forming a 'notch' Ga-graded structure in CIGS thin films.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J. Wang, Y.F. Zhang, F. Dong, J. Zhu,