Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5356743 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠The interfacial reactions of nanoscale Ni metal dots on single-crystal Si1âxCx/Si(1 0 0) substrates were investigated. ⺠The incorporation of C to Si substrates exhibited significant beneficial effects on improving the thermal stability of low-resistivity NiSi nanocontacts. ⺠The process window of low-resistivity NiSi in the Ni nanodots/Si1âxCx(1 0 0) sample was greatly extended by 200-250 °C as compared to that in the Ni nanodots/Si(1 0 0) sample. ⺠Highly curled and tangled amorphous SiOx nanowires with diameters of 8-20 nm were found to form on the 900 °C annealed Ni nanodots/Si1âxCx(1 0 0) samples.
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Authors
S.L. Cheng, Y.C. Tseng, S.W. Lee, H. Chen,