| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356772 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠The nanocrystalline SnO2 films were prepared by pulsed direct current magnetron sputtering. ⺠The crystallinity of the films was progressively improved by the annealing temperature. ⺠At the annealing temperature of 500 °C, the RMS roughness of the films was 1.1 nm. ⺠The red shift and improvement of the photoluminescence peaks intensity was found after annealed the films. ⺠The low electrical resistivity of 0.015 Ω cm with high optical transmittance of 90% were obtained at annealing temperature of 500 °C.
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Authors
A. Sivasankar Reddy, N.M. Figueiredo, A. Cavaleiro,