Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5356842 | Applied Surface Science | 2011 | 4 Pages |
Abstract
The adsorption of S2 on the Si(1 1 1)-(7 Ã 7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(1 1 1) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S2 at room temperature results in the passivation of silicon dangling bonds of Si(1 1 1)-(7 Ã 7) surface. Excessive sulfur forms Sn species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu-S bonds. Upon annealing the sample at 300 °C, CuSx nanocrystals were produced on the sulfur-terminated Si(1 1 1) surface.
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Authors
Yong Ping Zhang, Kian Soon Yong, Guo Qin Xu, Xing Yu Gao, Xue-Sen Wang, Andrew Thye Shen Wee,