Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5356885 | Applied Surface Science | 2011 | 5 Pages |
Abstract
Circular via holes with diameters of 10, 25, 50 and 70 μm and rectangular via holes with dimensions of 10 μm Ã 100 μm, 20 μm Ã 100 μm and 30 μm Ã 100 μm and drilled depths between 105 and 110 μm were formed in 300 μm thick bulk 4H-SiC substrates by Ar/F2 based UV laser drilling (λ = 193 nm) with a pulse width of â¼30 ns and a pulse frequency of 100 Hz. The drilling rate was linearly proportional to the fluence of the laser, however, the rate decreased for the larger via holes. The laser drilling produces much higher etch rates (229-870 μm/min) than conventional dry etching (0.2-1.3 μm/min) and the via entry can be tapered to facilitate subsequent metallization.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
L. Liu, C.Y. Chang, Wenhsing Wu, S.J. Pearton, F. Ren,