| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5356938 | Applied Surface Science | 2016 | 4 Pages |
Abstract
- Crystalline SiGe circular microstructures were grown by laser assisted techniques.
- Laser annealing enhances the microstructures aspect ratio.
- Ultrafast melting/solidification cycles avoid the spreading of the whole Ge film.
- Segregation provokes that the free edge of the microstructure is covered by Ge.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
F. Gontad, J.C. Conde, S. Chiussi, C. Serra, P. González,