Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5356967 | Applied Surface Science | 2016 | 7 Pages |
Abstract
The strain state in the AlN/GaN SLS was caused by the diffusion of Al from AlN into GaN in the SLS. The unintended AlGaN played a critical role in reducing the mismatch between the AlN and GaN layers, and efficiently accumulated stress without causing relaxation in the AlN/GaN SLS.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Po-Jung Lin, Shih-Yung Huang, Wei-Kai Wang, Che-Lin Chen, Bu-Chin Chung, Dong-Sing Wuu,