| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5357081 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠The ramping rate of sulfurization of CZTS precursors with high Sn content has been studied. ⺠Fast ramping at 21 °C/min resulted in the degraded CZTS films after sulfurization with a bubble-like surface. ⺠Slow ramping at 2 °C/min can remove the excessive Sn in the films and elevate the crystalline quality of CZTS films.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jie Ge, Yunhua Wu, Chuanjun Zhang, Shaohua Zuo, Jinchun Jiang, Jianhua Ma, Pingxiong Yang, Junhao Chu,