| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5357085 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠Homogeneous ODS monolayers are prepared on 6H-SiC(0 0 0 1). ⺠HOMO-LUMO gap of about 9 eV is determined by UPS and IPE. ⺠Large barrier heights of about 3 eV for charge transport from substrate to adsorbate are evidence for effective electronic passivation of SiC substrate. ⺠Time evolution of IPE spectra elucidates origin of ODS LUMO peak.
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Authors
Nabi Aghdassi, Dorothea Dulson, Steffen Linden, Liqiang Li, Lifeng Chi, Helmut Zacharias,