| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5357104 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠We synthesized 30-40 nm SiC layers by C implantation at 600 °C and 1250 °C annealing. ⺠C region Raman spectra (1100-1700 cmâ1) reveal CC bounds in the layer. ⺠Raman in the C region can probe structural quality; SiC bounds showed weak signal. ⺠Two parameters were defined for the analysis and agreed about the conclusions. ⺠Direct analysis by TEM demonstrated the reliability of the defined Raman parameters.
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Authors
R.M.S. dos Reis, R.L. Maltez, E.C. Moreira, Y.P. Dias, H. Boudinov,