| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5357129 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠The HCP binding site of SiHn/Cu(1 1 1) is due to the removal of unoccupied Si 3p-Cu 4s anti-bonding states by second layer Cu. ⺠A similar interaction is shown to drive CHn fragments to the experimentally-preferred three-fold sites. ⺠A simplistic approach to identifying site preference/reactive center is presented based on the COOP and PDOS of the system.
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Authors
I.G. Shuttleworth,