Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5357157 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠Fundamental reactions of HfO2 ALD with TEMAH and ozone on Si (1 0 0) surfaces at room temperature were studied. ⺠TEMAH is possible to adsorb at OH sites on water adsorbed Si surfaces at room temperature. ⺠The ozone irradiation on the TEMAH adsorbed Si surface at room temperature is effective in removing hydroaminocarbon adsorbates. ⺠A water vapor treatment at around 160 °C is effective in restoring the adsorption sites. ⺠HfO2 ALD was achieved with a growth temperature of 160 °C.
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Authors
F. Hirose, Y. Kinoshita, K. Kanomata, K. Momiyama, S. Kubota, K. Hirahara, Y. Kimura, M. Niwano,