IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor

Article ID	Journal	Published Year	Pages	File Type
5357157	Applied Surface Science	2012	6 Pages	PDF

Abstract

âº Fundamental reactions of HfO2 ALD with TEMAH and ozone on Si (1Â 0Â 0) surfaces at room temperature were studied. âº TEMAH is possible to adsorb at OH sites on water adsorbed Si surfaces at room temperature. âº The ozone irradiation on the TEMAH adsorbed Si surface at room temperature is effective in removing hydroaminocarbon adsorbates. âº A water vapor treatment at around 160Â Â°C is effective in restoring the adsorption sites. âº HfO2 ALD was achieved with a growth temperature of 160Â Â°C.

Keywords

HfO2 IR absorption spectroscopy Atomic layer deposition

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

Preview

IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor

Authors

F. Hirose, Y. Kinoshita, K. Kanomata, K. Momiyama, S. Kubota, K. Hirahara, Y. Kimura, M. Niwano,