Controllable giant magnetoresistance effect by the δ-doping in a magnetically confined semiconductor heterostructure

We propose theoretically an alternative method to effectively manipulate a GMR device by the δ-doping, which is based on a magnetically confined semiconductor heterostructure. It is found that the magnetoresistance ratio is tunable by changing weight and/or position of the δ-doping. Thus, a structurally controllable GMR device can be obtained for magnetoelectronics applications.