| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5357245 | Applied Surface Science | 2016 | 4 Pages |
â¿¢Periodic nanostructures were fabricated on GaAs wafers by four-beam laser interference patterning which have potential applications in many fields.â¿¢Significant different results were obtained on epi-ready and homo-epitaxial GaAs substrate surfaces.â¿¢Two-pulse patterning was carried out on homo-epitaxial GaAs substrate, a noticeable morphology transformation induced by the second pulse was observed.â¿¢Temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations. The calculation agrees well with the experiment results.
In this paper, periodic nanostructures were fabricated on GaAs wafers by four-beam UV pulsed laser interference patterning. Significant different results were observed on epi-ready and homo-epitaxial GaAs substrate surfaces, which suggests GaAs oxide layer has an important effect on pulsed laser irradiation process. In the case of two-pulse patterning, a noticeable morphology transformation induced by the second pulse was observed on homo-epitaxial GaAs substrate. Based on photo-thermal mode, temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations.
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