| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5357391 | Applied Surface Science | 2012 | 7 Pages |
Abstract
⺠We investigated the thermal stability of thin films of amorphous Si2C at 800 °C. ⺠The films were investigated by means of XPS, XRD, AFM, SEM and AES. ⺠Annealing led to the formation of new SiC bonds. ⺠Crystallization of silicon took place during thermal annealing. ⺠Small particles of silicon were formed on the surface of the film.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
R. Gustus, W. Gruber, L. Wegewitz, H. Schmidt, W. Maus-Friedrichs,