| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5357412 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠Al2O3 sputter deposited on Ge. ⺠Evidence of a GeO2 interlayer in as-deposited samples. ⺠Ar and forming gas annealings reduced the amount of oxidized Ge. ⺠Remaining transition layer consisted of aluminum germanates. ⺠Al2O3/Ge is more stable than Al2O3/Si in the absence of an oxidizing agent.
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Authors
Nicolau Molina Bom, Gabriel Vieira Soares, Cristiano Krug, Rafael Peretti Pezzi, Israel Jacob Rabin Baumvol, Claudio Radtke,