Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5357523 | Applied Surface Science | 2015 | 22 Pages |
Abstract
Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al2O3 films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III).
Related Topics
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Physical and Theoretical Chemistry
Authors
M.L. Chang, L.C. Wang, H.C. Lin, M.J. Chen, K.M. Lin,