Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM.1 Our results show the presence of well-developed GaSb QRs2 in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. We found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology.