| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5357698 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠Epitaxial ZnO thin films were synthesized, using the wet oxidation process. ⺠High quality of synthesized ZnO films were obtained by applying two temperatures (420 and 470 °C). ⺠·The lattice constant of ZnO films shrinked by increasing oxidation temperature through increase of oxygen diffusion in ZnO lattice. ⺠·It is possible to grow controllable stress of ZnO on GaN substrate using simple method for high quality thin films.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
K.M.A. Saron, M.R. Hashim, M.A. Farrukh,