| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358269 | Applied Surface Science | 2015 | 7 Pages |
Abstract
- How Ag transfers Fâ to the adjacent Si atom was investigated and deduced by DFT at atomic scale.
- Three-electrode CV tests proved the transferring function of Ag in the etching reaction.
- Uniform SiNWAs were fabricated on unpolished silicon wafers with KOH pretreatment.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Tianyu Feng, Youlong Xu, Zhengwei Zhang, Shengchun Mao,