Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358337 | Applied Surface Science | 2014 | 5 Pages |
Abstract
We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Congxiang Lu, Wen-wen Liu, Xingli Wang, Xiaocheng Li, Chong Wei Tan, Beng Kang Tay, Philippe Coquet,