| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358384 | Applied Surface Science | 2014 | 4 Pages |
Abstract
- Porous GaN was prepared by ultraviolet-assisted electrochemical etching.
- Bulk heterojunction of P3HT and PGaN was fabricated by a solution process.
- The excitonic emission and recombination were quenched at P3HT/PGaN interface.
- Prototype devices of P3HT/PGaN heterojunction showed obvious photovoltaic response.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Li-Feng Hu, Feng-Xia Wang, Feng-Xiang Deng, Yu Zhao, Ge-Bo Pan,