Article ID Journal Published Year Pages File Type
5358400 Applied Surface Science 2014 5 Pages PDF
Abstract
Properties and passivation effect of ultra-thin AlN films fabricated on InGaAs/GaAs near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated. The role of the coating on the surface is studied by examining the electric field build-up by photoreflectance. Photoluminescence confirms the passivation effect with ultra-thin layers and the reduced electric fields with thicker AlN layers. Atomic force microscopy shows that an ultra-thin AlN layer does not substantially alter the surface morphology.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Authors
, , , , , , , ,