Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358400 | Applied Surface Science | 2014 | 5 Pages |
Abstract
Properties and passivation effect of ultra-thin AlN films fabricated on InGaAs/GaAs near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated. The role of the coating on the surface is studied by examining the electric field build-up by photoreflectance. Photoluminescence confirms the passivation effect with ultra-thin layers and the reduced electric fields with thicker AlN layers. Atomic force microscopy shows that an ultra-thin AlN layer does not substantially alter the surface morphology.
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Physical and Theoretical Chemistry
Authors
P. Mattila, M. Bosund, H. Jussila, A. Aierken, J. Riikonen, T. Huhtio, H. Lipsanen, M. Sopanen,