Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358438 | Applied Surface Science | 2010 | 4 Pages |
Abstract
In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 °C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M. KolÃbal, J. Äechal, M. BartoÅ¡Ãk, J. Mach, T. Å ikola,