| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358528 | Applied Surface Science | 2015 | 5 Pages |
Abstract
- bis(2-phenylethynyl) end-substituted terthiophene (diPhAc-3T) films are synthesized.
- diPhAc-3T semiconductor, parylene-C dielectric and Ag gate form film transistors.
- Laser-based technology is used to transfer/print such multilayered structures.
- The structure and electrical properties of the transistors are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
C. Constantinescu, A.K. Diallo, L. Rapp, P. Cremillieu, R. Mazurczyk, F. Serein-Spirau, J.P. Lère-Porte, P. Delaporte, A.P. Alloncle, C. Videlot-Ackermann,