Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358564 | Applied Surface Science | 2015 | 4 Pages |
Abstract
In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented.
Keywords
Related Topics
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Physical and Theoretical Chemistry
Authors
M. Fernandes, Y. Vygranenko, M. Vieira,