| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358578 | Applied Surface Science | 2015 | 5 Pages |
Abstract
Copper (Cu) films with a minimal thickness of 300Â nm were grown on MgO(1Â 1Â 1) substrates in high vacuum by pulsed laser deposition (PLD) at various temperatures to achieve a single crystal Cu film with flat terraces without grain boundaries. We investigated the effect of the substrate temperature, the pulse repetition rate, the deposition time and the laser fluence. A temperature threshold is observed above which the growth mode is changed from a uniform flat mode to a three dimensional mode. A combined process involving a germination step at moderate temperature followed by a growth step at higher temperature yields a 450Â nm almost continuous film.
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Authors
F. Aweke, F. Antoni, J. Hulik, G. Morvan, C. Speisser, P. Veis, F. Le Normand,