| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358612 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠P atoms as diffusion barriers led Ni-P film to form NiSi2 film at low temperature. ⺠Stable capping layer was formed with P, O, Ni and Si. ⺠Epitaxial NiSi2 layer with atomically flat interface was formed at 700 °C.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
H.F. Hsu, H.Y. Chan, T.H. Chen, H.Y. Wu, S.L. Cheng, F.B. Wu,