| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358615 | Applied Surface Science | 2011 | 7 Pages |
Abstract
⺠Thermal annealing induces sizeable layer structure variation on 3 nm ALD HfO2 films. ⺠Crystallizes are monoclinic and orthorhombic at low annealing temperatures. ⺠Annealing causes films to crystallize into monoclinic phase at higher temperatures. ⺠XPS results showed formation of Hf silicate with increasing annealing temperatures. ⺠The existence of Hf silicate increases interfacial layer thickness in GIXRR analysis.
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Authors
Wei-En Fu, Yong-Qing Chang,