Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358616 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠We studied the electronic structure of boron-doped graphene, and analyzed the potential barrier of lithium diffusion on the different number of boron-doped graphene in this article. ⺠The investigation shows that graphene has changed from semimetal to semiconductor with the increasing number of doped boron atoms. ⺠Graphene became an electron-deficient system and is conducive to lithium-ion adsorption. ⺠The potential barrier for lithium diffusion on boron-doped graphene is higher than that of intrinsic graphene.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Shuanghong Gao, Zhaoyu Ren, Lijuan Wan, Jiming Zheng, Ping Guo, Yixuan Zhou,