| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358622 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠A metal/oxide/high k-Ta2O5/oxide/silicon novel nanocrystal memory as a trapping layer was fabricated. ⺠Post-annealing treatment, which can passivate defects and improve the material quality of the high-k dielectric, was applied to optimize device performance. ⺠Material and electrical characterization techniques including XRD, XPS, AFM, and electrical measurements were performed to analyze the device under different annealing conditions. ⺠Devices with the best performance and material quality can be fabricated at an annealing temperature of 900 °C.
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Authors
Hsiang Chen,