| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358624 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠The surface inversion of p-GaN films was successfully achieved by H2 treatment at high temperatures. ⺠The shifts in the surface Fermi level due to the H2 treatment were identified by XPS measurement. ⺠The linear I-V behavior of the H2-treated p-GaN films is due to the high VN density pinned the surface Fermi level close to the conduction-band edge. ⺠The surface inversion by means of H2 treatment can play an important role in lowering the metal contact resistance to p-GaN films.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Bohr-Ran Huang, Chia-Hui Chou, Wen-Cheng Ke, Yi-Lun Chou, Chia-Lung Tsai, Meng-chyi Wu,