Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358678 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠We study the properties of the aluminum nitride films grown by plasma ALD. ⺠The effect of plasma pulse time and temperature on the film properties was studied. ⺠We found that the hydrogen level of AlN films is high. ⺠The growth temperature had a significant effect on the film properties. ⺠Hydrogen concentration correlated with the mass density and refractive index.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Markus Bosund, Timo Sajavaara, Mikko Laitinen, Teppo Huhtio, Matti Putkonen, Veli-Matti Airaksinen, Harri Lipsanen,