| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358678 | Applied Surface Science | 2011 | 4 Pages |
Abstract
⺠We study the properties of the aluminum nitride films grown by plasma ALD. ⺠The effect of plasma pulse time and temperature on the film properties was studied. ⺠We found that the hydrogen level of AlN films is high. ⺠The growth temperature had a significant effect on the film properties. ⺠Hydrogen concentration correlated with the mass density and refractive index.
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Physical and Theoretical Chemistry
Authors
Markus Bosund, Timo Sajavaara, Mikko Laitinen, Teppo Huhtio, Matti Putkonen, Veli-Matti Airaksinen, Harri Lipsanen,