| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358687 | Applied Surface Science | 2011 | 5 Pages |
Abstract
⺠Homogeneous Hf-doped Ta2O5 high-k dielectric layers deposited. ⺠Ru-based gate deposition modifies more significantly interfacial layer parameters. ⺠Ru is thermally stable in contact with Hf-doped Ta2O5. ⺠O2 annealing of RuO2 metal electrode causes substantial structural modifications.
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Authors
A. Paskaleva, M. Ťapajna, E. DobroÄka, K. HuÅ¡eková, E. Atanassova, K. Fröhlich,