Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358742 | Applied Surface Science | 2014 | 7 Pages |
Abstract
- An individual CHO radical is weakly adsorbed on the h-BN surface.
- It is more stable for CHO radicals to adsorb on the BN bond from the both sides of the h-BN sheet in pairs.
- Up to 40% CHO radicals can be adsorbed on the h-BN sheet.
- The band gap of h-BN sheet is decreased in various ways after CHO radical adsorption, leading to the enhancement of its electronic conductivity.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yu Tian, Xiao-fan Pan, Yue-jie Liu, Jing-xiang Zhao,