| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358772 | Applied Surface Science | 2009 | 4 Pages |
Abstract
a-C:H films were deposited by rf PACVD from methane and their growth rate, thermal treatment, morphology, adhesion and electrical passivation properties were investigated. Deposition at room temperature gave the highest film growth rates. The Raman spectra obtained for a-C:H films indicated that the D peak becomes more pronounced as the annealing temperature grows higher. The rf plasma produced a-C:H passivation films which are sufficiently insulating at voltages up to ca. 2200Â V.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
F. Cerny, V. Jech, S. Konvickova, J. Suchanek,