Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358837 | Applied Surface Science | 2011 | 7 Pages |
Abstract
ⶠIn the low-voltage EBL, the exposure depth and width approach a saturation value. ⶠThe exposed patterns are strongly affected by the aperture size and baking temperature in the low voltage EBL. ⶠThe depth in the superposed-dose area is 10-20% greater than that in the single-dosed area at 1 kV. ⶠUsing these characteristics of low-voltage EBL, we fabricated stepped 3-D nanostructures, V-groove patterns, and 3-D structures with depth variations of only a few nanometers.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Seung Hun Oh, Jae Gu Kim, Chang Seok Kim, Doo Sun Choi, Sunghwan Chang, Myung Yung Jeong,