Article ID Journal Published Year Pages File Type
5358840 Applied Surface Science 2011 4 Pages PDF
Abstract
▶ A modified sol-gel process was used to prepare BZT thin films. ▶ Orientation of BZT films can be tailored by using MgO and ZrO2 buffer layers. ▶ High FOM and low leakage current density were achieved in BZT films with buffer layers.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel processing
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