Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358843 | Applied Surface Science | 2011 | 6 Pages |
Abstract
â¶ This paper deals the fabrication of 4H-SiC nanopillars using ICP-RIE dry etching in Cl2/Ar gas plasma. â¶ Cylindrical nanopillars of 300Â nm diameter and 500Â nm height with smooth side walls were etched on SiC wafer. â¶ The novelty is the fabrication of nano pillars without patterned etch mask. â¶ The most interesting feature of this mask-less etching is the pore structure of the pillars that is each pillar has been produced as a hollow structure having a pore centrally along its length. â¶ The self assembled micro masking effect for the fabrication of this unique nanostructure has been investigated in this paper. â¶ To our knowledge, no report is available on the fabrication of SiC nanopillars without using patterned nano mask. â¶ In this report we present the experimental results on the novel fabrication of SiC nanopillars using mask-free Cl2 based ICP-RIE etching technique.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Kathalingam, Mi-Ra Kim, Yeon-Sik Chae, S. Sudhakar, T. Mahalingam, Jin-Koo Rhee,