| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358852 | Applied Surface Science | 2011 | 6 Pages |
Abstract
ⶠStudy of optoelectronical properties of RF sputtered (at 95 °C) a-Si:H films. ⶠStrong correlation between H content, dangling bonds and optoelectronic properties. ⶠEnhanced disorder of the films introduced by large number of inactive impurities. ⶠExistence of SiH and SiH2 bonds - high values of [SiHx] - low doping efficiency. ⶠn-i-p solar cells fabricated on polyimide substrates with an efficiency of 1.54%.
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Authors
D. Girginoudi, C. Tsiarapas, N. Georgoulas,