Article ID Journal Published Year Pages File Type
5358861 Applied Surface Science 2011 4 Pages PDF
Abstract
▶ GaN surface is treated by oxygen plasma in an ICP etching system. ▶ GaN-based Schottky barrier diodes are then fabricated. ▶ The treated diodes exhibit reduced leakage current in low reverse bias range. ▶ The diodes have larger sub-bandgap photoresponse due to newly-generated surface defects.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes
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