| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358883 | Applied Surface Science | 2011 | 9 Pages |
Abstract
ⶠ(NH4)2S passivation parameters investigated for optimal chemical passivation of InGaAs. ⶠXPS and AFM used to determine level of native oxide and surface roughness present. ⶠVariations in (NH4)2S concentration, treatment time, temperature and pre-treatment. ⶠ10% (NH4)2S for 20 min at room temperature provides optimal chemical passivation.
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Authors
B. Brennan, M. Milojevic, C.L. Hinkle, F.S. Aguirre-Tostado, G. Hughes, R.M. Wallace,