| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5358895 | Applied Surface Science | 2011 | 6 Pages |
Abstract
ⶠThe successful growth of AlxGa1âxN thin films on Si (1 1 1) substrate with various Al mole fractions has been obtained. ⶠStructural and morphology studies indicate that relatively larger tensile strain exits in the sample with the smallest Al mole fraction. ⶠA smaller compressive strain and larger grain size appears with Al mole fraction = 0.3. ⶠStrain is relaxed with the highest Al mole fraction sample. ⶠLinear relationship between the barrier height and Al mole fraction has been obtained.
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Authors
A. SH. Hussein, Z. Hassan, S.M. Thahab, S.S. Ng, H. Abu Hassan, C.W. Chin,