Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5358947 | Applied Surface Science | 2014 | 6 Pages |
Abstract
ZnO thin films with high conductivity and high transparency were grown on Si (1Â 0Â 0) substrates by atomic layer deposition. Thickness dependent (43-225Â nm) changes in crystallographic, optical and electrical properties are reported and discussed. Increase in film thickness caused a decrease in the bandgap by relaxation of stress in the plane of the film and led to an improvement in crystallinity and conductivity. The optical studies showed a noticeable change towards the contribution of excitonic and phonon replica to the UV-emission band.
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Authors
Trilok Singh, Thomas Lehnen, Tessa Leuning, Diptiranjan Sahu, Sanjay Mathur,