Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5359058 | Applied Surface Science | 2015 | 5 Pages |
Abstract
Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using CuxS interlayers under different annealing temperatures. It is shown that the GZO/CuxS contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current-voltage characteristics. The lowest specific contact resistivity of 1.66 Ã 10â2 Ω cm2 was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/CuxS/p-GaN and CuxS/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance.
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Physical and Theoretical Chemistry
Authors
Wen Gu, Xingyang Wu, Peng Song, Jianhua Zhang,