Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5359156 | Applied Surface Science | 2009 | 5 Pages |
Abstract
Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1Â 1Â 1) and (1Â 0Â 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Biswajit Saha, Manjula Sharma, Abhisakh Sarma, Ashutosh Rath, P.V. Satyam, Purushottam Chakraborty, Milan K. Sanyal,