| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5359266 | Applied Surface Science | 2011 | 6 Pages |
Abstract
ⶠNanocrystalline SnOx thin films were deposited by pulsed laser ablation at 470 K. ⶠAlmost stoichiometric films were grown in the presence of 13.3 Pa of oxygen. ⶠIncreasing the deposition oxygen pressure up to 66.7 Pa a worsening of the structural properties was observed. ⶠSAED analysis shows that the unit cell shrinks along the principal crystallographic axes due to oxygen vacancies, according to the stoichimetric parameter values.
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Authors
E. Fazio, F. Neri, R. Ruggeri, G. Sabatino, S. Trusso, G. Mannino,