Article ID Journal Published Year Pages File Type
5359269 Applied Surface Science 2011 4 Pages PDF
Abstract
▶ Δ trajectory transitions were observed during plasma etching of SiO2/Si interface. ▶ Roughness height analysis showed morphology of the etched interface was gradually changed. ▶ Transition periods of Δ have strongly relationship with roughness height of the etched interface.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Assessment of interface roughness during plasma etching through the use of real-time ellipsometry
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