Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5359286 | Applied Surface Science | 2011 | 4 Pages |
Abstract
We examined the correlation between thickness of an epitaxial VO2 phase grown on a TiO2 (0 0 1) substrate by the excimer-laser-assisted metal organic deposition (ELAMOD) process and the metal-insulator transition (MIT) property of it. The abrupt and hysteretic MIT was observed for the epitaxial films (thickness: t â¥Â 6 nm), and the epitaxial film (t â¤Â 4 nm) showed semiconductor behavior. When an amorphous VOx layer was prepared on the ultrathin epitaxial phase (t â¤Â 4 nm) by the ELAMOD, a non-hysteretic MIT was successfully observed. The non-hysteretic MIT was found to be owing to roughened interface between the epitaxial phase and the amorphous phase, where there would be a number of structural defects.
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Authors
Masami Nishikawa, Tomohiko Nakajima, Toshiya Kumagai, Takeshi Okutani, Tetsuo Tsuchiya,