Article ID Journal Published Year Pages File Type
5359286 Applied Surface Science 2011 4 Pages PDF
Abstract
We examined the correlation between thickness of an epitaxial VO2 phase grown on a TiO2 (0 0 1) substrate by the excimer-laser-assisted metal organic deposition (ELAMOD) process and the metal-insulator transition (MIT) property of it. The abrupt and hysteretic MIT was observed for the epitaxial films (thickness: t ≥ 6 nm), and the epitaxial film (t ≤ 4 nm) showed semiconductor behavior. When an amorphous VOx layer was prepared on the ultrathin epitaxial phase (t ≤ 4 nm) by the ELAMOD, a non-hysteretic MIT was successfully observed. The non-hysteretic MIT was found to be owing to roughened interface between the epitaxial phase and the amorphous phase, where there would be a number of structural defects.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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