| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5359343 | Applied Surface Science | 2011 | 7 Pages |
Abstract
The doping atom location has effect on the electronic structures of Si/N-codoped TiO2. ⶠReplacing O atom with N atom and replacing the adjacent Ti atom with Si atom, TiO2 has the smallest defect formation energy and band gap. ⶠIn Si/N-codoped TiO2, the hybridization between impurity states and O-2p states could enhance the lifetime of photo-generated holes and change some unoccupied N-2p states to occupied states.
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Authors
Weimei Shi, Qifeng Chen, Yao Xu, Dong Wu, Chunfang Huo,